<i>In Situ</i> Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
نویسندگان
چکیده
The aim of this study is to show the applicability continuous residual gas analysis for growth monitoring undoped SiC with physical vapor transport (PVT). For purpose, two crystals were grown, one without doping and nitrogen doping. During processes conducted evaluated emphasis on temporal variations content. charge carrier concentration final was determined by optical methods (spectrally resolved absorption measurement UV-VIS Raman spectroscopy) results compared during growth. A correlation found between measured nitrogen-related signal in samples.
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ژورنال
عنوان ژورنال: Solid State Phenomena
سال: 2023
ISSN: ['1662-9787', '2813-0936', '1662-9779', '1012-0394']
DOI: https://doi.org/10.4028/p-568g51